Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs
نویسندگان
چکیده
Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs" (2001).
منابع مشابه
Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications
Far infrared ~FIR! absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20–200 mm and compared with the calculated results. Both Be ~in the range 3310– 2.6310 cm! and C (1.8310– 4.7310 cm)-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model ...
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